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Junfeng Han

Junfeng Han

Email: pkuhjf@bit.edu.cn

Mobile: 0086-18612096895

AddressSchool of Physics, Beijing Insititute of Technology (Liangxiang campus), Beijing

 

Education:

PhD

2006.9-2011.6

School of Physics , Peking University 

(Two years in TU Darmstadt, Germany)                                                                 

Beijing,  China

Major: Photovoltaic,   Director: Prof. Zhao Kui, Prof. Wolfram Jaegermann

Bachelor

2002.9-2006.7

School of Physics , Peking University

Beijing,  China

Major: Physics,  Director: Prof. Zhao Kui                  

Bachelor II

2002.9-2006.7

School of Mathematical Science, Peking University

Beijing,  China

Major: Applied mathematics (Double Majored) 

 

Working experiences:

2014.12-

Beijing Institute of Technology                                                                 

Assistant professor

2012.2-2014.7

CNRS-IMN institute, France

Postdoctor

 

Current Research:

1, Photovoltaic: CuBiS2, CuSbS2, CuInGaSe, CdTe and CuZnSnS. The films were prepared by evaporation, sputtering and MBE. The morphology, structure, component and optical and electrical properties were analyzed by SEM, AFM, XRD, EDX, Raman, XPS, TEM, QE and IV. The research focus on low cost and high performance photovoltaic devices.

2. 2D materials: MoSe2, WSe2, MoTe2, WTe2, BN, SnTe2. 2D materials were prepared by Chemical Vapor Deposition and Mechanical exfoliation. Heterojuction structures were made by ‘wet’ or ‘dry’ methods. Optical and electrical properties were measured by Physical Property Measurement system. The research focus on new concept photon-electronic devices.

 

3. Topological Insulate: Bismuth, germanene, Stannylene. The topological insulate were deposited by MBE. The surface information were obtained by Scanning Tunnel Microscope. The research focus on new physics and concepts in condensed state, like quantum Hall effect, quantum anomalous Hall effect and spin electronics.

Previous research:

Junfeng Han has been working on photovoltaic materials and devices for ten years and published more than 30 articles.

(1) CIGS thin film solar cells:

In 2007, CIGS solar cell (20mm×20mm) with 10% efficiency and modules (300mm×300mm) with 6% efficiency were prepared. The related technology were extended to the industrial. In 2010, a new concept solar device, CIGS tube module (Φ30×250mm)was fabricated and introduced to the industrial.

(2) CdTe thin film solar cells:

In 2009, CdTe solar cell (20mm×20mm) with 11% efficiency was prepared. XPS was used to investigated the interfaces and surfaces of CdTe devices. In 2012, a study about the degradation of CdTe was supported by EDF in France, which involved in a large photovoltaic program.


Selected articles:

1. HAN Jun-feng, ZHAO Kui, et al. Sol. Energy Mat. & Sol. Cell, 95 (2011) 816-820, citied by 33

2. HAN Jun-feng, LIAO Cheng, et al. Materials Research Bulletin 46 (2011) 194-198, citied by 17

3. HAN Jun-feng, LIAO Cheng, et al. Journal of Alloys and Compounds 509 (2011) 5285-5289, citied by 16

4. Junfeng Han, Chunjie Fan, et al. Applied Surface Science 256 (2010) 5803-5806, citied by 7

5. HAN Jun-feng, LIAO Cheng, et al. Thin solid films 545 (2013) 251-256

6. Han Jun-feng, Fu Gan-hua, et al. J Mater Sci: Mater Electron 24 (2013) 2695–2700

7. HAN Jun-feng, LIAO Cheng, et al. Journal of crystal growth 382 (2013) 56-60, citied by 6

8. HAN Jun-feng, LIAO Cheng, et al. J Mater Sci: Mater Electron 24 (2013) 4636-4642, citied by 3

9. Junfeng Han, Ganhua Fu, et al. J. Phys. Chem. Solids 74 (2013) 1879-1883, citied by 4

10. HAN Jun-feng, LIAO Cheng, et al. Materials Research Bulletin 49 (2014) 187-192, citied by 4

11. Jun-feng Han, Cheng Liao, et al. J Mater Sci: Mater Electron 25 (2014) 2237–2243

12. HAN Jun-feng, LIAO Cheng, et al. Vacuum 105 (2014) 46-51

13. HAN Jun-feng, LIAO Cheng, et al. J. Phys. Chem. Solids 75 (2014) 1279-1283 citied by 2

14. HAN Jun-feng, OUYANG Liang-qi, et al. Material Letters 136 (2014) 278-281


 

 


 

 

 

Release date:2015-10-27